| 摘要 |
PURPOSE:To control the thickness of a pressure-receiving diaphragm by forming an oxide insulating film into a semiconductor substrate. CONSTITUTION:Oxygen ions are implanted into a semiconductor substrate 1 and annealed to shape an insulating film as an oxide layer 6 in desired thick ness, and a piezoresistance element 3 is formed onto the surface of the substrate 1. Only the lower layer of a pressure-receiving diaphragm 2 in the rear of the substrate 1 is dry-etched and a cavity 5 is shaped, thus controlling the thickness of the diaphragm 2.
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