发明名称 POLISHING METHOD FOR WAFER
摘要 PURPOSE:To improve polishing efficiency and to produce high quality wafer, by thermally adhering two sheets of wafers while maintaining flatness to form a complex wafer having high flatness then polishing with both face polisher and separating. CONSTITUTION:At first a wafer 15 is heated on a heating board 12 while maintaining high flatness then small amount of wax 10 is dripped to overlap the wafers 16. Thereafter it is pressure contacted by a weight 13 to form a wax layer 10 having uniform thickness and cooled simultaneously by a cooling board to form a complex wafer having high flatness. Said complex wafer is mounted in a plurality of hole sections of carrier 2 to polish while increasing holding force of upper and lower surface plates 3, 4 but polishing agent containing separated grinding particles fed from said hole section 9 will not intrude into contacting face thus to prevent polishing on contacting face. After polishing, solution such as trichlane is heated to separate two sheets of wafers 15, 16. Consequently polishing performance is improved to produce a high quality wafer where only single face is polished.
申请公布号 JPS59102570(A) 申请公布日期 1984.06.13
申请号 JP19820209389 申请日期 1982.12.01
申请人 HITACHI SEISAKUSHO KK 发明人 AKAMATSU KIYOSHI
分类号 B24B37/04;B24B37/10;B24B37/30 主分类号 B24B37/04
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