| 摘要 |
PURPOSE:To obtain a gate electrode having low electric resistance and high mechanical strength by forming the gate electrode by a high melting-point metal and shaping a hat-shaped low resistance metal onto the gate electrode. CONSTITUTION:An n-type GaAs semiconductor operating layer 12 is shaped onto a semi-insulating GaAs substrate 11 having resistivity of 10<7>So-cm or more through an ion implantation method. A source electrode 14 and a drain electrode 15 consisting of an AuGe alloy are formed onto the surface of the semiconductor operating layer 12, and a gate electrode 13 composed of a WSi high melting-point metal is shaped between the source electrode 14 and the drain electrode 15. Low resistance region electric fields 16 for lowering series parasitic resistance are formed on both sides of the gate electrode. The main point of a field-effect transistor is that a hat-shaped low resistance metal (Ti-Pt- Au) 19 is shaped extending over the top face 17 and one part 18 of side face of the gate electrode 13. The low resistance metal is 0.5mum thick, and is brought into contact with the gate electrode on the top face 17 and side face 18 of the gate electrode.
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