| 摘要 |
PURPOSE:To obtain a sensor which has large gauge rate, small variation in its resistance value due to temperature change and possibility of using in a magnetic field by using a non-single crystalline semiconductor having activation energy of dark conductivity lower than a specific value and including Si. CONSTITUTION:A non-single crystalline semiconductor 2 having 15meV or less of activation energy of dark conductivity including Si is formed on a substrate 1 made of a base film. Two pairs of electrodes 3, 4 and 5, 6 are so disposed thereon as to perpendicularly cross. The electrodes 3, 4 measure a strain in Y direction and the electrodes 5, 6 measure a strain in X direction. Thus, its gauge rate G is large due to the non-single crystalline semiconductor, an amplifier is eliminated, an activation energy of dark conductivity is small, and a temperature correction is eliminated. Further, it can be used under a magnetic field of predetermined degree magnitude.
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