| 摘要 |
PURPOSE:To enable crystal growth at a low temperature, and to improve the quality of a blue light-emitting element by using a disopropyl compound as the raw material of a group VI element when the epitaxial layer thin-film of Zn chalcogenide is manufactured through an organometallic vapor phase decomposition method. CONSTITUTION:A GaAs substrate is etched and set into a reaction tube 1, the tube 1 is evacuated to a high degree, hydrogen is introduced as a carrier gas, and a valve 8 is adjusted and the pressure of the tube 1 is kept constant. Changeover valves 11, 13, 16, 18 are connected to a main line and 12, 14, 15, 17 to a disposal line in changeover valves 11-18, and only hydrogen gas is fed into the tube 1. The temperature of the substrate is elevated up to a reaction temperature, and stabilized, the valves 11 and 12, 13 and 14 and 17 and 18 are changed over respectively, and a raw material gas is introduced into the tube 1. The gas is reacted for a fixed time, the valves 11-18 are changed over, and the temperature is lowered and a reaction is completed. A ZnSe thin-film manufactured through the manufacture is used, thus improving the quality of a blue light-emitting element. |
