| 摘要 |
PURPOSE:To obtain a thin film transistor having a gate electrode, which is not eroded with etching liquid, without impairing the characteristics of the gate, by constituting a gate electrode material by using heat-resisting, strong- acid-resisting metal and heat-resisting, low-resistance metal. CONSTITUTION:A gate electrode is composed of heat-resisting, strong-acid- resisting metal and heat-resisting, low resistance metal. Namely, e.g., the gate electrode 2 on a substrate 1 is formed by laminating the heat-resisting, strong- acid-resisting metal 2a comprising tantalum and heat-resisting, low resistance metal 2b comprising molybdenum Mo, nickel chromium alloy NiCr, chromium Cr, nickel Ni and the like alternately by sputtering. It is desirable to use the heat-resisting, strong-acid-resisting metal 2a comprising the tantalum for the film, which is sputtered at first on the substrate, but the other low resistance metal 2b can be used. In this way, the gate electrode is provided with corrosion resistance against etching liquid for a transparent electrode film without imparing the characteristics of the gate. Thus a thin film transistor without breakdown of a gate line is obtained. |
