| 摘要 |
PURPOSE:To prevent deterioration in the resolution and a contrast of a resist pattern generated due to photoabsorption on the resist surface by performing pattern formation while forming a resist of a two layer shape consisting of a lower layer p-type resist and an upper layer n-type resist. CONSTITUTION:Polymethylglutarimide (PMGI) is applied by spin coating on a substrate 1 as a p-type resist for obtaining a resist film 2, next, polyglycidyl methacrylate (PGMA) is applied by spin coating as an n-type resist for obtaining a resist film 3. Then, the resist 3 is pulse-exposed by KrF excimer laser beam 4 as the far ultraviolet rays through a mask 5 for obtaining a resist pattern 3a by performing development. Next, KrF excimer laser beam 4 is irradiated with the pattern 3a as a mask to expose a resist 2 and to remove an exposed part of the resist 2 by performing development to obtain 2a similarly shaped with the pattern 3a. Thereby, resist pattern formation at the time of exposure and development by using DUV light and excimer laser radiation can be performed with the high-resolution and a high-contrast. |
