| 摘要 |
PURPOSE:To prevent the occurrence of leaks and soft errors between memory cells effectively, by directly connecting a polycrystalline semiconductor layer, which is to become the storage terminal of one-bit memory capacitor, with a single crystal semiconductor layer, which is to become the source or drain region of an access transistor. CONSTITUTION:A first capacitor is formed with a high-concentration impurity region, a first insulating film 4, which is formed on the upper part of said region, and a polycrystalline semiconductor layer. A second capacitor is formed with the polycrystalline semiconductor layer, a second insulating film 24a, which is formed on the upper part thereon, and a low resistance layer. A memory capacitor (a) of one bit is constituted by the parallel capacitors of the first and second capacitors. Therefore, the sufficient memory capacitors are secured in a very narrow area. The polycrystalline semiconductor layer, which is to become the storage terminal of the memory capacitor, is isolated by the first insulating film 4 and directly connected to a single crystal semiconductor layer, which is to become the source or drain region of an access transistor (b). Thus, a structure, which is resistant to leaks and soft errors between neighboring memory cells, is obtained. |
