| 摘要 |
PURPOSE:To prevent a diode from short-circuiting due to pinholes and to reduce the resistance of a Schottky barrier electrode by oppositely forming an ohmic electrode and the barrier electrode on the same surface in an amorphous silicon film surface. CONSTITUTION:An amorphous silicon film 3 is formed on a substrate 1, and ohmic electrodes 2 are formed in individual electrodes. The tip of the electrodes 2 and Schottky barrier electrodes 4 are aligned at a predetermined interval lon the same surface of the silicon 3 oppositely on a linear line to form a planar photodiode. Thus, a diode short-circuit due to a pinhole is eliminated to improve its yield. A light shielding conductive metal film 5 is superposed on most of the electrode 4 to form a film, thereby reducing the resistance of the electrode 4. |
