| 摘要 |
PURPOSE:To facilitate continuity of an epitaxial layer to a substrate and to easily control the conductivity of the layer by forming a diffused layer for outputting the potential of the substrate on the partial wall of an isolating groove between elements. CONSTITUTION:A buried collector layer 2, an epitaxial layer 3, a first silicon oxide film 4 and a silicon nitride film 5 are sequentially formed on a silicon substrate 1. Then, grooves 6, 7 which arrive from the film 5 at the substrate 1 are formed, and a second silicon oxide film 8 is formed on the inner surface. Only the films 8 on the inner surfaces of the grooves are removed, and a diffused layer 9 and a third silicon oxide film 10 are formed. After the interiors of the grooves 6, 7 are filled with the silicon 1, the surface is oxidized to form a fourth silicon oxide film 12, the film 5 is removed, the film 4 on the layer 9 is opened, and an electrode 13 is formed thereon. Thus, the conductivity of the epitaxial layer can be easily controlled, and continuity of the epitaxial layer to the substrate can be easily attained.
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