| 摘要 |
Power MOSFETs and similar components are made up of many cells which are connected in parallel with one another and which each contain a parasitic bipolar transistor (6). If only one of these bipolar transistors undergoes emitter-collector breakdown, the entire power MOSFET is destroyed. The risk of a destructive breakdown can be reduced if the doping concentration of the source zone (3) is as a maximum equally as high as the doping concentration of the zone (2, 4) which is adjacent to the source zone and of opposite conduction type. <IMAGE>
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