| 摘要 |
PURPOSE:To perform lithography at high speed under critical conditions not to cause uneven ness in the lithography due to a temperature rise of a resist so as to grasp conditions of a wafer surface in real time at the time of lithography, by mounting an infrared temperature detector on the charged particle beam lithography device for detecting a temperature of the sample surface during the lithography. CONSTITUTION:A lithography control circuit 17 performs a movement of a sample table 10 and control of a beam by the lithography data sent from a computer to lithograph a pattern on a sample while an infrared temperature detector 9 constantly measures a resist temperature of the sample for sending a temperature signal to the lithography control circuit 17. An upper limit of a resist temperature which enables lithography is set at the prescribed value in the lithography control circuit 17 according to resist sensitivity characteristics and the value of temperature rise of an irradiation part. The lithography control circuit stops lithography when a temperature signal attains the prescribed value and reopens the lithography when the temperature signal becomes under the prescribed value. Otherwise, the lithography is changed over to the lithography method having low temperature rise even it takes time. In this way, a measurement according to temperature rise of the resist is taken by detecting temperature in real time thus enabling the lithography having a little loss time and a short lithography time while preventing uneven sensitiveness due to temperature rise.
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