发明名称 THIN FILM FORMATION APPARATUS
摘要 PURPOSE:To obtain a thin film formation apparatus which can easily and perfect ly remove material adhered to the internal wall of a reaction vessel by covering the internal wall of the reaction vessel with a flexible film material and provid ing a roller to feed the film material and a roller to take up the film material inside the reaction vessel. CONSTITUTION:After a reaction vessel 101 maintainable at a degree of vacuum is evacuated, a reaction gas is introduced into a gas inlet port 108 and a pres sure adjusting mechanism 106 is adjusted to a determined degree of vacuum condition. Next, a high frequency power is applied to an electrode 104, a low temperature plasma is generated in the space including a sample 103 in order to excite the reaction gas and a reaction product is deposited on the sample 103. Here, a material deposited on the electrode 104 and sample board 102 is removed by plasma cleaning using halogen gas, while a material deposited on a film material 107 can be perfectly removed by taking up and removing the film material 107 along the internal wall of the reaction vessel 101 with the feed roller 206 and takeup roller 207. Thereby, reaction product adhered to the internal wall of reaction vessel can be removed perfectly.
申请公布号 JPS63246814(A) 申请公布日期 1988.10.13
申请号 JP19870081420 申请日期 1987.04.02
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KIMURA TADASHI;TAKEBAYASHI MIKIO;ONISHI YOICHI
分类号 H01L21/31;H01L21/205 主分类号 H01L21/31
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