| 摘要 |
PURPOSE:To prevent the corrosion and change of properties of a wiring metal by removing an insulating film or a metallic thin-film applied onto a semiconductor substrate through reactive ion etching and conducting the high-frequency sputtering etching of an inert gas without exposure into atmospheric air. CONSTITUTION:A photoresist 14 is formed to a wiring section on the laminate of an silicon substrate 11, an silicon oxide film 12 and an aluminum film 13. When the film 13 is removed selectively through a reactive ion etching RIE method, using the resist 14 as a mask, a reaction product 16 adheres onto a side face. The substrate 11 is not exposed to atmospheric air, transferred into a sputtering etching chamber separate from a reaction chamber in which RIE is performed, and etched through the high-frequency sputtering of an inert gas in environment in which an PIE gas and the reaction product are not mixed. Consequently, the product 16 adhering on a section to be etched is gotten rid of. Accordingly, the corrosion and change of properties of an aluminum wiring can be obviated.
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