| 摘要 |
PURPOSE:To lessen the difference of the width dimension between the top surface and the undersurface of permalloy patterns and to approximate the sectional form of the patterns to a rectangle by a method wherein concave parts are formed on the primary coat and the permalloy patterns are formed on the concave parts. CONSTITUTION:Recessed parts 3 in the sectional form with top spreading are formed at the prescribed positions on the primary coat 2 such as SiO2, etc., formed on a wafer 1. A permalloy layer 4 is formed on the whole surface of the primary coat 2 according to vapor-deposition. Permalloy patterns 5 are formed by patterning the permalloy layer 4 according to a dry etching. The permalloy patterns 5 are formed on the recessed parts 3 and the peripheral surfaces, which have been performed a dry etching, are declined toward the base in a foot- spreading form. |
