| 摘要 |
PURPOSE:To contrive a reduction in processing soft and the improvement of measurement accuracy by a method wherein the number of protrusions and the area per etch- pit are respectively compared with the number of protrusions and the area of each group of etch-pits. CONSTITUTION:A measuring point on a single crystal wafer 11 is positioned under a microscope 13 and the detection of one etch-pin isolated within the visual field and the area of the etch-pit are found. Then, the areas of all the groups of etch-pits within the visual field and the number of protrusions of the groups are found. How to find the areas is found, for instance, by a method wherein an image output is turned into a binary signal and low-level lengths are integrated in order along a scanning line (a). The number of protrusions are counted, for instance, along the peripheries of black images in X and Y directions and if the incremental sign in an X-axis direction or a Y-axis direction is reversed, it is regarded as showing a protrusion and the number of the reversed positions is counted. Moreover, the area of each group of etch-pits and the number of protrusions of the group are respectively compared with the found number of protrusions per etch-pit and the intially set number of protrusions per etch-pit. Thereby, the number of the etch-pits in the groups of etch-pits is decided.
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