| 摘要 |
PURPOSE:To improve the function of eliminating a static breakdown caused by the input of a high potential by a method wherein a 1st conductivity type high concentration impurity region and a 2nd conductivity type high concentration impurity region which is connected to an input terminal are formed on a 1st conductivity type semiconductor substrate so as to contact with each other. CONSTITUTION:An n<+>type impurity region 2 is formed on a p-type semiconductor substrate 1 and a p<+>type impurity region 3 whose impurity concentration is higher than the concentration of the substrate 1 is formed so as to contact with the n<+>type impurity region 2. Further, an n<+>type impurity region 4 is formed corresponding to the n<+>type impurity region 2. Those n<+>type impurity regions 2 and 4 are connected to an input terminal IN and a grounding terminal GND respectively through metallic wiring layers 5. Thus, by providing the p<+>type impurity region 3 so as to contact with the n<+>type impurity region 2 and reducing a junction breakdown strength against a positive high potential input to cause a stable breakdown, the strength against a static breakdown can be improved. |
