| 摘要 |
PURPOSE:To orientate uniaxially lead phthalocyanine molecules in a lead phthalocyanine deposition film, and improve the switching characteristics for a memory device, and forming a metal phthalocyanine film formed by the LB method, between the lead phthalocyanine deposition film and a substrate on which a lower electrode is formed. CONSTITUTION:On a quartz substrate 1, a lower metal electrode 2 is formed by a vapor-deposition method. For electrode material, gold is suitable which constitutes an ohmic junction with copper phthalocyanine and does not make an oxide. Thereon a copper phthalocyanine film is formed by the LB method. Lead phthalocyanine is deposited so as to stack lead phthalocyanine molecules right above copper phthalocyanine molecules constituting the copper phthalocyanine film 3a formed by the LB method. Thereby, the lead phthalocyanine molecules in the lead phthalocyanine deposition film are uniaxially orientated, so that the switching characteristics for a memory device can be improved. |
