| 摘要 |
PURPOSE:To make it possible to manufacture the sputtering target suitable for the high speed formation of a ferromagnetic thin film by a method wherein necessary distortion is given to the surface and the whole internal part of a magnetic material at the recrystallization temperature or below of the material. CONSTITUTION:The necessary magnetic material is prepared, and the work for introduction of a distortion is conducted thereon. However, the degree of distortion directly affects on the speed of film formation, and also as it gives an effect on the property of the formed film, it is desirable that the works such as forging, rolling, extrusion and the like are conducted for the purpose of obtaining uniform distortion on the whole target. Also, pertaining to the temperature at which the distortion is given to the target, it is to be set at the recrystallization temperature or below of the target material taking into consideration that it is necessary to have the distortion to remain. Then, when a sputtering operation is conducted, the temperature of the target goes up in general, and the distortion released is. In order to prevent the occurrence of this kind of trouble, it is desirable that a stabilization annealing is performed so that material is heated up and cooled down to the recrystallization temperature or below. Then, a configurational processing as a target is conducted on the material on which the above-mentioned processes have been performed.
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