| 摘要 |
PURPOSE:To make it possible to control easily the current between a source and a drain with a gate voltage, by constituting an insulating substrate under a channel region in the form of a trapezoid, and making the channel region thin. CONSTITUTION:In an insulating substrate 1, a part under a gate electrode 6 is protruded as compared with the other part, and made up in the form of a trapezoid. The thickness of a channel region 5 composed of a P-type or N-type semiconductor active layer of low concentration is made thinner than that of the other part. A source region 3 and a drain region 4 are constituted in the opposite conductivity type to the channel region 5, and the end-portions of both regions are in contact with the channel region 5 on the trapezoid A. Thereby, transferring path of a carried formed by a gate voltage is generated in a shallow part just under a gate oxide film, so that a current between the source and the drain can be surely and easily controlled.
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