| 摘要 |
PURPOSE:To contrive to improve the density of wirings and to contrive an increase in the integration of an integrated circuit by a method wherein the connection between wiring layers is linked using one contact hole. CONSTITUTION:An SiO2 film 2 is formed on an Si substrate 1 as an insulating film and a first wiring layer 3 consisting of a first layer poly Si film is formed on this. Then, an SiO2 film 4 is formed on this as an interlayer insulating film and a second wiring layer 5 consisting of a second layer poly Si film is formed thereon. After this, the whole surface is covered with A film 6 formed by a CVD method. Such one contact hole that the layers 3 and 5 are made to expose simultaneously is formed in this film 6. That is, this contact hole 8 is made into one of so a size as to lie over on the layer 5 from the upper part of the layer 3 pinching an edge 7 of the layer 5 between the layer 6 and the film 3. Moreover, a third layer 9, which consists of an Al film and comes into contact simultaneously to the layers 3 and 5 through this contact hole 8, is formed.
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