| 发明名称 |
Vertically integrated photodetector-amplifier. |
| 摘要 |
<p>Monolithically integrated optical detector-amplifiers are described in which the detector-amplifier structure has vertical integration, and the amplifier is made of recessed gate MISFETS. The structure is planar which permits very fine line photolithography.</p> |
| 申请公布号 |
EP0286348(A2) |
申请公布日期 |
1988.10.12 |
| 申请号 |
EP19880303000 |
申请日期 |
1988.04.05 |
| 申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
CHANG, ROBERT PANG HEND;CHENG, CHU-LIANG;TELL, BENJAMIN |
| 分类号 |
H01L29/78;H01L27/14;H01L27/144;H01L31/10;H01L31/105 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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