| 摘要 |
PURPOSE:To largely reduce stress applied to a semiconductor laser element at the time of bonding by bonding it on a place except the mounting surface of an island. CONSTITUTION:An island 14 is mounted on any of the same polarity epitaxial layer 9 as a substrate and a double-hetero junction layer on a heat sink 12 mounted with the island 14 formed of a conductive layer through an insulating layer 13 with a semiconductor laser element 11 in which either one of right and left sides from a current narrowing unit as a center is etched to the substrate by avoiding the narrowing unit, the same polarity epitaxial layer 9 as that of the substrate 7 is grown on the part, an electrode 1 is formed, and double-hetero junctions 3-5 adjacent to the layer 9 and a block layer 6 are etched to the substrate 7 so as not to arrive at the narrowing unit 10, and the heat sink 12 body is mounted with the other, and bonded to a place except the mounting part of the island 14. Thus, since it is not directly bonded to the element 11, stress is not applied to prevent it from deteriorating.
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