| 摘要 |
PURPOSE:To obtain a semiconductor device with excellent insulating characteristics and a high reliability by a method wherein a silicon oxide film formed by a CVD method is employed as an insulating film on a silicide electrode and wiring. CONSTITUTION:After an insulating film 2 is formed on a substrate 1, a silicide electrode and wiring 3 is formed. Then a silicon oxide film 4 is built up on the silicide electrode and wiring 3 by a chemical vapor deposition (CVD) method. Further, an electrode and wiring 5 is formed on it to obtain a construction shown by an attached figure. The silicon oxide film built up by a CVD method shows excellent insulating characteristics even on the silicide film. The minuteness of the silicon oxide film built up by SiH2Cl2 gas and N2O gas is influenced by a forming pressure and a forming temperature. The silicon oxide film formed under the pressure within a range about 0.1-2.0 mbar and the temperature within a range of 700-950 deg.C has excellent film thickness controllability and shows sufficient insulating characteristics and minuteness of the film. With this constitution, the silicide electrode and wiring can be applied to a device with an insulating thin film and high speed operation can be achieved.
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