| 摘要 |
PURPOSE:To improve wirebondability, by performing chip-fixing and wirebonding in a reducing atmosphere after ultra-violet ray cleaning of a lead frame in the case where a semiconductor pellet and the inner lead of a lead frame of copper or copper alloy are subjected to a wirebonding applying an Au wire or a Cu wire. CONSTITUTION:When a semiconductor pellet 3 and the inner lead 2 of a lead frame 10 of copper or copper alloy are subjected to a wirebonding applying an Au wire or a Cu wire 4, fixing of the semiconductor pellet 3 and wirebonding are performed in a reducing atmosphere after ultra-violet ray cleaning of the lead frame 10. In this case, the ultra-violet rays contain an ultra-violet ray of ozone-generating region and that of ozone-decomposing region. Thereby, pellet-fixing and wirebonding are enabled without plating the lead frame 10 with noble metal like Ag. |
