| 摘要 |
PURPOSE:To remove the adverse influence caused by a parasitic transistor by a method wherein an electrode is provided on the insulating region located on the circumference or in the vicinity of the lateral P-N-P transistor provided on a semiconductor chip. CONSTITUTION:Electrodes 9 and 9' are provided in advance on the insulated regions 2 and 2' located on the circumference of lateral P-N-P transistors 6 and 6'. When a lateral P-N-P element 6 of individual kind is used, the current P running into an insulated region through a parasitic transistor can be run into the lowest potential of the chip by wiring the electrode 9 to the lowest potential of the semiconductor chip, and the effect by an active element can be reduced. Besides, N-P-N transistors 13, 14 and 15, to be used for small medium and large currents, a resistance element 7 and a junction pad 8 are formed on a substrate 1. According to this constitution, the effect of the parasitic element due to the arrangement of the lateral P-N-P element on the chip can be reduced, thereby enabling to obtain the device of semicustom system. |
