发明名称 |
SEMICONDUCTOR DEVICE HAVING A DIFFUSION BARRIER AND PROCESS FOR ITS PRODUCTION |
摘要 |
This invention provides a semiconductor device having an electrode conductor layer (6) on a semiconductor substrate (1) through the medium of a diffusion barrier layer (5) which is formed of an amorphous material having a higher crystallization temperature than the heat treatment temperature for the semiconductor device, and a process for manufacturing this device. According to this invention, an undesired reaction between the metal of the electrode conductor layer (6) and the material of the semiconductor substrate (1) and the diffusion of the electrode conductor material into the semiconductor substrate (1) can be prevented, whereby a semiconductor device having a high thermal reliability can be obtained. |
申请公布号 |
EP0248445(A3) |
申请公布日期 |
1988.10.12 |
申请号 |
EP19870108180 |
申请日期 |
1987.06.05 |
申请人 |
HITACHI, LTD. |
发明人 |
KOUBUCHI, YASUSHI;ONUKI, JIN;KOIZUMI, MASAHIRO |
分类号 |
H01L21/768;H01L21/28;H01L21/3205;H01L23/532;H01L29/43;H01L29/45;(IPC1-7):H01L21/283;H01L29/40 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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