Electron beam lithographic method

摘要

An electron beam lithographic method for describing a fine pattern on the surface of a semiconductor specimen by irradiating the surface of the specimen with an electron beam. The electron beam generated by an electron gun is converged onto a specimen through electron lenses. When a step of lithography has been finished, the electron beam is blanked by a shaping deflector that shapes the electron beam and that is disposed between a first shaping iris and a second shaping iris, so that the specimen is not damaged by the reflected electron beam or by the scattered electrons.