发明名称 CHARGE-COUPLED SEMICONDUCTOR DEVICE WITH DYNAMIC CONTROL
摘要 <p>32 "Charge-coupled semiconductor device with dynamic control." In a CCD, especially in an image sensor device, the information density can be doubled in that the electrodes (21,22,31,32...) are switched separately between a clock signal and a reference signal. Clock signals and reference signals are obtained as output signals of a shift register (13) controlled by a multi-phase clock, which is realized, for example, in C-MOS technology. Information at the input terminal (107) of the first stage (101) of the shift register (13) determines, after having been passed on or not having been passed on depending upon the clock pulse signals of the register clock, the output signal of the next stages (101) of the shift register (13) and hence the voltage variation at the electrodes (21,22,31,32...) connected to the outputs (113) of the stages (101).</p>
申请公布号 CA1243112(A) 申请公布日期 1988.10.11
申请号 CA19850479474 申请日期 1985.04.18
申请人 N.V.PHILIPS'GLOEILAMPENFABRIEKEN 发明人 BOUDEWIJNS, ARNOLDUS J.J.;ESSER, LEONARD J.M.
分类号 H04N5/335;G11C19/28;G11C27/00;G11C27/04;H01L21/339;H01L27/148;H01L29/76;H01L29/762;H01L29/772;H03H11/26;H04N3/15;(IPC1-7):H04N3/15 主分类号 H04N5/335
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