发明名称 TARGET FOR SPUTTERING
摘要 PURPOSE:To obtain a target for sputtering having a large area and satisfactory workability and used to form a magnetic thin film by using a casting having a compsn. represented by a prescribed formula and contg. a heavy rare earth metal and Fe as principal components, a light rare earth metal and one or more of Pd, Pt, Ag and Au. CONSTITUTION:This target for sputtering is a casting used to form a magnetic thin film of an alloy based on a heavy rare earth metal (HR) and Fe by sputtering and contains a light rare earth metal (LR) and one or more along Pd, Pt, Ag and Au. The atomic compsn. of the target is represented by the formula (where M is one or more among Pd, Pt, Ag and Au, A is elements including Fe and other than LR, HR and M, x=0.05-0.6, y=10-50 and z=0-15). The HR is selected among Ge, Tb and Dy and the LR among Ce, Pr, Nd and Sm.
申请公布号 JPS63243266(A) 申请公布日期 1988.10.11
申请号 JP19870076741 申请日期 1987.03.30
申请人 SEIKO EPSON CORP 发明人 SHIMOKAWATO SATOSHI
分类号 C23C14/34 主分类号 C23C14/34
代理机构 代理人
主权项
地址