发明名称 Memory device having backup power supply
摘要 A memory device includes a reset signal generator for generating a reset signal when the output voltage from a main power supply circuit to supply a driving voltage to a memory decreases to a first predetermined voltage, and a switching circuit for allowing a data holding voltage from a backup power supply to be supplied to the memory in place of the driving voltage from the main power supply circuit in response to the reset signal. This memory device further includes a comparator for generating an inhibiting signal when it detects that the data holding voltage from the backup power supply following generation of the reset signal is lower than the voltage necessary to hold the data in the memory, and a control circuit for setting the memory into an operation inhibition state when it detects that the inhibiting signal was generated from the comparator following the reset signal.
申请公布号 US4777626(A) 申请公布日期 1988.10.11
申请号 US19850807828 申请日期 1985.12.11
申请人 TOKYO ELECTRIC CO., LTD. 发明人 MATSUSHITA, TSUYOSHI;ITO, YOSHIAKI
分类号 G06F1/24;G11C5/14;G11C7/22;G11C7/24;(IPC1-7):G11C7/00;G11C11/40 主分类号 G06F1/24
代理机构 代理人
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