| 摘要 |
PURPOSE:To alleviate an electrical field effective on a gate insulating film of a MOS transistor for a transfer gate by performing lock control on a source of a driving transistor for a sense amplifier circuit. CONSTITUTION:A source voltage for the driving transistor 7 for the sensor amplifier circuit 5 is not an earth voltage VSS but a clock controlled voltage VS'. In other words, the source voltage VS' for the driving transistor 7 for the sense amplifier circuit is set at a certain middle level beta(0<beta<VCC) before a word line WL voltage is boosted up to a level of VCC+alpha, and reset to 0V after bringing the word line WL voltage back to an electric supply voltage VCC level again. By this method, the electric field effective on the insulating film of the MOS transistor for transfer gate can be alleviated.
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