发明名称 FORMATION OF MULTILAYERED THIN FILM BY SPUTTERING
摘要 PURPOSE:To simplify the structure of a device and to suppress the occurrence of film defects by concentrically arranging plural targets so that the targets confront a substrate and by successively subjecting the targets to sputtering to form plural kinds of films on the substrate. CONSTITUTION:A substrate 4 and a target are placed opposite to each other in a sputtering chamber under reduced pressure. The target is composed of a discoid or circular inner target 6 concentric with the substrate 4 and an outer target 8. The targets 6, 8 are made of different film forming materials. The targets 6, 8 are successively subjected to sputtering by electric discharge to form thin films corresponding to the targets 6, 8 on the substrate 4.
申请公布号 JPS63243270(A) 申请公布日期 1988.10.11
申请号 JP19870077190 申请日期 1987.03.30
申请人 SUMITOMO LIGHT METAL IND LTD 发明人 ANDO MAKOTO;SOUBU TAKAO
分类号 H01L21/285;C23C14/34;H01F41/18 主分类号 H01L21/285
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