| 摘要 |
An IC device comprising a plurality of FET's using a compound semiconductor, more specifically, a zincblende type semiconductor substrate, having a surface of a (111) plane. By use of this plane, differences of characteristics of the FET's depending on directions along which gates of the FET's are arranged when the gate length is made shorter are prevented, allowing arrangement of gates of the FET's in different directions, particularly perpendicular to each other, with making the gate length shorter to miniaturize and densify the device.
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