| 摘要 |
PURPOSE:To provide uniform temperature distribution of a growth surface and obtain a high-purity single crystal having excellent uniformity, by heating a GaAs substrate mounted on a metallic substrate holder so that the peripheral part thereof may be in contact and held by the substrate holder from the opposite side by a heater and simultaneously heating the peripheral part of the growth surface by electron beams. CONSTITUTION:A GaAs substrate 1 for growing a single crystal is mounted on a metallic substrate holder 2 so that the peripheral part of the substrate 1 may be in contact and held by the substrate holder 2 through a C ring 4, etc. The substrate 1 is then directly heated by a heater 5 provided in the direction opposite to the single crystal growth surface and the peripheral part of the growth surface of the substrate 1 which becomes at a low temperature only by heating with the heater 5 is simultaneously heated by sweeping electron beams 6 while selecting density in a helical form concentric with the substrate 1. Thereby the temperature distribution on the growth surface of the substrate in uniformly controlled to grow a GaAs single crystal.
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