| 摘要 |
PURPOSE:To effectively suppress a parasitic effect and to realize a reduction in the area of an electrode section by forming a recess to a well region from an impurity diffused region, and forming a wiring electrode layer in the recess. CONSTITUTION:A wiring electrode layer 2 is formed in a recess 1 to a well region 11 from an impurity diffused region 12. As a result, the layer 2 for short- circuiting the region 12 to the region 11 is disposed near the bottom of the region 11 by the formation of the recess 1. Thus, a potential control to the whole region 11 is facilitated, and a defect, such as a parasitic effect is effectively suppressed. The area of the region 11 can be reduced, and the area efficiency of the whole element can be improved. |
