发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To prevent malfunction from being caused even if two input signals rise at the same time by changing the potential difference level of an output signal is response to the potential difference between nodes. CONSTITUTION:The potential at nodes N1, N2 is decreased and increased from an intermediate level respectively and its potential difference exceeds a threshold voltage of a transistor (TR) Tn1 at a time t2, then the potential at the nose N1' is decreased. The potential of an output signal Vout1 starts increasing and the potential at the node N1' goes to an L level (at time t3) and the potential of the output signal Vout1 goes to an H level. ON the other hand, the potential of the node N2' is unchanged and the output signal Vout2 remains N level. Since the potential level of outputs signals Vout1, Vout2 is changed in response to the potential difference between the nodes N1 and N2 in such a way, the output signals Vout1, Vout2 are not affected by the intermediate potential, thereby preventing malfunction.
申请公布号 JPS63242019(A) 申请公布日期 1988.10.07
申请号 JP19870076606 申请日期 1987.03.30
申请人 TOSHIBA CORP 发明人 SAWADA KAZUHIRO;SAKURAI TAKAYASU
分类号 H03K17/00 主分类号 H03K17/00
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