发明名称 |
RECRYSTALLIZATION AND PURIFICATION OF METALLIC GALLIUM AND DEVICE THEREFOR |
摘要 |
PURPOSE:To enable simple and economical purification of high-purity metallic gallium in a relatively large amount, by cooling the metallic gallium with a liquid cooling medium in the presence of a seed crystal on the surface of molten gallium and growing a crystal at a specific growth rate using the seed crystal as a nucleus. CONSTITUTION:A seed crystal is present on the surface of molten gallium and the vicinity of the seed crystal is cooled with a liquid cooling medium. The temperature of the liquid cooling medium is controlled to solidify most of the above-mentioned molten gallium while maintaining the growth rate of gallium crystal grown from the seed crystal as the nucleus within the range of 0.5-3cm/hr. The residual molten gallium is the separated.
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申请公布号 |
JPS63242996(A) |
申请公布日期 |
1988.10.07 |
申请号 |
JP19870076080 |
申请日期 |
1987.03.31 |
申请人 |
NIPPON LIGHT METAL CO LTD;MITSUBISHI KASEI CORP |
发明人 |
MURAMATSU KOICHI;ARAI KAZUMASA |
分类号 |
C30B11/00;C22B58/00;C30B29/02 |
主分类号 |
C30B11/00 |
代理机构 |
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代理人 |
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地址 |
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