| 摘要 |
PURPOSE:To enable anisotropic etching to be performed at a constant and high rate, by etching a structure of binary mixed crystals of compound semiconductor materials with a mixture gas consisting of chlorine and hydrogen. CONSTITUTION:In order to etch a structure of semiconductor materials chosen from a group consisting of AlP, AlAs, AlSb, GaP, GaSb, InP, InAs and InSb, a gas mixture consisting of chlorine and hydrogen, or of chlorine and a metal hydride is introduced. Further, a mixture gas in which argon is incorporated is also used. Said metal hydride gas is at least one of arsine, phosphine, antimony hydride, selenium hydride and tellurium hydride. In this manner, anistropic etching can be performed at a constant and high rate.
|
