| 摘要 |
PURPOSE:To obtain a solid-state image pickup element with less fixed pattern noise by signal after setting a potential of vertical signal line to a reference potential of a readout CTD provided above and under a photodetecting section comprising an MOS sensor. CONSTITUTION:A prescribed electric charge exists at each stage of a CTD82 at the end of a horizontal scanning period, the entering into horizontal blanking period and a TX2A and a BLGA are brought into a high level, a BLDA is brought into a level lower than the expected minimum potential of a vertical signal line and the BLDA is brought into high level, then a vertical signal line is clamped to a prescribed potential. When the TX1A goes to high level and an H1A goes to low level, an electric charge transmitted from an input section of a CTD82 is transferred to the vertical signal line. When the vertical signal line goes to high, the signal charge is transferred to the vertical signal line, mixed with a bias charge from the CTD and flows to the CTD82 when the transfer pulse H1A goes to high. Since the vertical signal line of the solid-state image pickup element is clamped to a reference level, the element is not susceptible to the variance in the threshold voltage of each gate and unnecessary charge. |
