| 摘要 |
PURPOSE:To stably form a thin film on the surface of a substrate by providing an electrode around the substrate to be treated, impressing a voltage on the electrode, and uniformizing the high-frequency bias power to be impressed on a substrate holder in the substrate in the title thin film forming device using plasma. CONSTITUTION:A gaseous mixture of Ar and O2 is introduced into a plasma producing chamber 13 from an inlet 14, and the plasma of the gases is formed in the plasma producing chamber 13 by the microwave supplied from a microwave source 11 and the magnetic field generated by energizing a coil 15 on the outside of chamber 13. Gaseous SiH4 is supplied from an inlet 21 into a reaction chamber 16 communicating with the plasma producing chamber 13 through an opening, the electrode 23 is provided around the substrate 19 to be treated, an electric field is impressed by an electric power source 24, and the bias power is uniformized in the substrate holder 19 by a high-frequency power source 17. The bias voltage is uniformized by the impression of the electric field on the electrode 23, and the thin film of SiO2 formed by the reaction of SiH4 with O2 is uniformly formed on the surface of the substrate 19.
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