| 摘要 |
PURPOSE:To contrive to enahance quality of the fusion recrystallized silicon layer of a semiconductor device when a silicon-on-insulator substrate is to be formed by a method wherein a thin silicon nitride film is formed on a thick silicon dioxide film as an insulating film thereof, and moreover an extremely thin silicon dioxide film is formed. CONSTITUTION:A silicon dioxide film 5 is formed on a silicon substrate 1. Then a thin silicon nitride film 6 is formed. Then phosphorus ions are implanted, and a heat treatment is performed in an oxidizing atmosphere to form an extremely thin silicon dioxide film 8 on the surface of the silicon nitride film 6. Then a polycrystalline silicon layer 3 to be performed with fusion recrystallization is formed. The polycrystalline silicon layer 3 thereof is fusion recrystallized according to the energy beam of laser or an electron beam, etc., and by converting the film into a single crystal or crystal grains, a proper surface protective film is formed. |
