| 摘要 |
1,063,301. Selective signalling; superconductive matrix stores. MULLARD Ltd. Feb. 11, 1964 [Feb. 18, 1963], No. 6468/63. Headings G4C and G4H. [Also in Division H3] A matrix store uses superconductive storage elements of the kind described in Specification 998,792, gating conductors in series forming the rows a, b, c, d, and control conductors in series forming the columns A, B, C, D. The inputs to the rows consist of conductor pairs which are short-circuited by input cryotrons 35, 36, 37, 38, and likewise the row outputs are short-circuited by output cryotrons 40, 41, 42, 43. A single row is energized by a word pulse at terminal 24 by selectively energizing two of the control conductors 27, 28, 31, 32 of cryotrons 25, 26, 29, 30, 33, 34 of an address selector 22. At the same time a digit write current is applied to the input of a selected row, the adjacent short-circuit by a cryotron 35, 36, 37, 38 being removed by applying a write control pulse to the control conductor 39. The input current thus passes through the selected row of gate conductors and returns by way of superconducting cryotron 40, no voltage being available at the associated output as the read control conductor is unenergized. At the storage element whose control conductor is energized, the main part of the gating conductor is resistive and the input current passes through a superconductive shunt circuit. When the word and digit pulses terminate, a continuous circulating current is established in the main and shunt paths of the selected storage element which is then wholly superconductive. The stored digit is read out by energizing the read control conductor 44 so that the output cryotrons become resistive, and at the same time the selected column control conductor is energized. The circulating current in the selected element commences to decay as the main part of the gating conductor becomes resistive, and an effective pulse potential is obtained at the output since the input cryotrons are superconductive. In line or crossed-film cryotrons may be used. As described in the Specification to which reference is made, each storage element may have its main part made of tin, and the shunt circuit and control conductor formed of lead.
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