GAAS SINGLE CRYSTAL AND PREPARATION THEREOF

摘要

A GaAs single crystal containing at least one impurity selected from the group consisting of B, Si, S, Te and In in a concentration of at least 1015/cm3, fluctuation of which is not larger than 20% in a plane perpendicular to a growth direction of the single crystal, which is prepared by pulling up the GaAs single crystal from a GaAs raw material melt contained in a crucible which is encapsulated with a liquid encapsulating layer in an inactive gas atmosphere at a high pressure with applying a magnetic field to the raw material melt.