发明名称 TARGET FOR SPUTTERING
摘要 PURPOSE:To obtain a target for sputtering preventing the peeling of target chips from the target body during sputtering and having satisfactory film forming performance by making the structure of at least the erosion progress part of the target columnar crystal. CONSTITUTION:A target 101-102 for sputtering is stuck to a backing plate 104 with a bonding layer 103 in-between and the structure of at least the erosion progress part of the target is made columnar crystal. The columnar crystal structure is formed so that the growth direction makes 40-90 deg. angle to the plane of the backing plate 104. The oriented columnar crystal structure can be formed by casting a target alloy in a metal mold having anisotropy in the cooling direction. Thus, the peeling of target chips 102 from the target body 101 during sputtering is prevented.
申请公布号 JPS63241167(A) 申请公布日期 1988.10.06
申请号 JP19870076740 申请日期 1987.03.30
申请人 SEIKO EPSON CORP 发明人 YAMAGISHI TOSHIHIKO;SHIMODA TATSUYA
分类号 C23C14/34 主分类号 C23C14/34
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