| 发明名称 |
METHOD OF GROWING SILICON CRYSTALS BY THE CZOCHRALSKI METHOD |
| 摘要 |
An improved method of growing silicon crystals by the Czochralski method to obtain a desired oxygen concentration level with both axial and radial uniformity. A crucible is located within a heater to achieve a given temperature profile which is related to the oxygen concentration, and then raised and rotated at an increasing speed together with a high crystal rotation rate to achieve the uniformity. |
| 申请公布号 |
DE3377874(D1) |
申请公布日期 |
1988.10.06 |
| 申请号 |
DE19833377874 |
申请日期 |
1983.06.23 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GHOSH, HITENDRA;MURGAI, ASHOK;WESTDORP, WOLFGANG ALFRED |
| 分类号 |
C30B15/00;C30B15/04;C30B15/14;C30B15/20;C30B15/22;C30B15/30;C30B29/06;H01L21/208;(IPC1-7):C30B15/14 |
主分类号 |
C30B15/00 |
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