发明名称 THIN FILM TRANSISTOR ARRAY
摘要 <p>PURPOSE:To obtain thin film transistors having the structure in which the defective transistors and defective parts can be easily disconnected from scanning wire and signal wire by providing >=1 points of bridge parts to the scanning wires and signal wires with respect to one picture element of the thin film transistor array. CONSTITUTION:The bright part 9 of the signal wire is provided at the part intersecting with the scanning wire 1 to relay the signal wire 2 and the bridge parts 10 of the scanning wire are provided at two points on both sides of the juncture of the scanning wire 1 and gate electrodes 7. For example, the bridge parts 10a and 10b are cut by a laser beam 15 by which the defective part can be isolated when a short-circuiting 14 is generated by a counter electrode 12 and the scanning wire 1. The defectless display image is obtd. by impressing an input voltage to the scanning wire 1 from both sides thereof at this time. The short circuiting at the intersected part and the defect of the thin film transistors can be similarly corrected by selecting and cutting the cutting points of the scanning wire 1 and the signal wire 2 according to a defect mode. The defective image display by the defects of the thin film transistors are thereby decreased and the defects by cross-shortings and counter electrode-shortings are eliminated without increasing the line resistance.</p>
申请公布号 JPS63240527(A) 申请公布日期 1988.10.06
申请号 JP19870074671 申请日期 1987.03.27
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HAYASHI YOSHITAKE
分类号 H01L21/82;G02F1/13;G02F1/136;G02F1/1368;G09F9/30;H01L27/12;H01L29/78;H01L29/786 主分类号 H01L21/82
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