发明名称 METHOD AND DEVICE FOR MEASURING VOLTAGE OF HIGH RESISTANCE SEMICONDUCTOR
摘要 PURPOSE:To shorten a resistance measurement time by providing two gate circuits which estimate a saturation voltage from the variation rate of an induced voltage and sampling the induced voltage. CONSTITUTION:When a DC current I is supplied between terminals A and B of a semiconductor sample 2, a detection output induced between terminals C and D appears across a resistance 4. Then a gate 5 is opened at time t1 and a gate 6 is opened at time t2; and a differential amplifier 7 calculates the difference between the both and the gates 5 and 6 are opened at time t3 and t4 respectively, so that an arithmetic circuit 8 calculates a variation rate and a saturation voltage at two points from the output difference. Thus, the resistance measurement of the sample 2 is executed in a short period of time and many samples are measured in a short period of time. In this case, the time interval between the opening of the gate 5 and the opening of the gate 6 is made variable to select proper sampling intervals for various waveforms.
申请公布号 JPS63241471(A) 申请公布日期 1988.10.06
申请号 JP19870077175 申请日期 1987.03.30
申请人 MITSUBISHI MONSANTO CHEM CO;MITSUBISHI KASEI CORP 发明人 NISHIMOTO NAOAKI;INOUE YUICHI;SHIMADA MIZUO;NISHIHARA EIICHIRO
分类号 G01R31/26;G01R27/02 主分类号 G01R31/26
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