| 摘要 |
PURPOSE:To prevent the occurrence of soft errors due to alpha rays effectively and to form a contact window and the like with high position accuracy, by making the thickness of a protective film on a memory cell array part thick, and making the thickness of the protective film on a peripheral part thin. CONSTITUTION:A protective film 7 is provided on a memory cell array part 2 and a peripheral part 12 in a semiconductor storage device. The thickness of the protective film 7B on the memory cell array part 2 is made thick. The thickness of the protective film 7C on the peripheral part 12 is made thin. For example, the memory cell array part 2, a peripheral circuit part 3 and an Al wiring layer 4 are provided on the surface side of a semiconductor substrate 1. The wiring layer 4 is formed through an SiO2 layer 5, which forms an insulat ing layer. A surface protective film 6 comprising an SiN layer and the surface protective film 7 comprising polyimide resin are overlapped on the wiring layer 4. With respect to the polyimide layer 7, the thickness of a part 7B on the memory cell array part 2 is made thick and to be, e.g., 35-50mum. The thickness of a part 7C on the peripheral part 12 is made thin and to be, e.g., 3-5mum. |
