| 摘要 |
PURPOSE:To obtain a compd. useful for optically functional material and a material for semiconductor, etc., by heating a mixture incorporating a prescribed ratio of metallic In, In oxide or its precursor and metallic Ga, etc., and metalling Mg, etc., under a specified condition. CONSTITUTION:Metallic In, In oxide of In compd. which is decomposed to In oxide by heating, and Ga compd. in the similar relation to said In compd. and Mg compd. in the similar relation to said In compd., are prepared. The mixture having a component ratio of In:Ga:Mg=1:1:2 (in the atomic ratio) is obtained by mixing the above-mentioned compds. Then, said mixture is heated at >=600 deg.C in an atmospheric air, in an oxidizing atmosphere or in an atmosphere wherein In and Ga are not reduced to <3 valency state respectively and Mg is not reduced to <2 valency state.
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